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HMF3M32M6V
FLASH-ROM MODULE 12MByte (3M x 32-Bit) ,72pin-SIMM, 3.3V Part No. HMF3M32M6V GENERAL DESCRIPTION
The HMF3M32M6VA is a high-speed flash read only memory (FROM) module containing 6,291,456 words organized in a x32bit configuration. The module consists of six 1M x 16 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.0V DC power supply.
FEATURES
w Access time : 70,80, 90 and 120ns w High-density 12MByte design w High-reliability, low-power design w Single + 3V 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 -70 -80 -90 -120 20 21 22 23 24 Vss
PIN ASSIGNMENT
SYMBOL /RESET DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /CE_1L /CE_2L DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 NC /CE_3H DQ16 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /CE_1H /CE_2H DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 DQ31 NC NC /CE_3L A19 /OE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL /WE A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 NC NC Vss
OPTIONS
w Timing 70ns access 80ns access 90ns access 120ns access
MARKING
w Packages 72-pin SIMM M
72-PIN SIMM TOP VIEW
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FUNCTIONAL BLOCK DIAGRAM
HMF3M32M6V
DQ0 - DQ31 A0 - A19 /WE /CE_1L
32 20 A0-19 DQ 0-15 /WE /OE /CE RY-BY /Reset A0-19 DQ16-31 /WE /OE RY-BY /Reset DQ16-31
U1
U3
/CE /CE_1H
A0-19 DQ 0-15 /WE /CE_2L /WE /OE /CE RY-BY /Reset
A0-19 DQ 16-31 /WE /OE RY-BY /Reset
DQ16-31
U2
U4
/CE /CE_2H
A0-19 /WE /OE /CE_3L /RY_BY /Reset DQ0-15 /WE /OE /CE RY-BY /Reset
A0-19 DQ16-31 /WE /OE RY-BY /Reset DQ 16-31
U5
U6
/CE /CE_3H
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG
HMF3M32M6V
RATING -0.5V to +4.0V -0.5V to +4.0V 6W -65oC to +150 oC
Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause perman ent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL VCC VSS VIH VIL MIN 2.7V 0 2.0 -0.5 TYP. 3.0V 0 MAX 3.6V 0 Vcc+0.3V 0.8V
DC CHARACTERISTICS (CMOS Compatible)
PARAMET DESCRIPTION ER ILI ILIT ILO Input Load Current A9 Input Load Current Output Leakage Current VIN=Vss to Vcc, Vcc=Vcc max Vcc= Vcc max ; A9=12.5V VOUT= Vss to Vcc, Vcc= Vcc max /CE=VIK, /OE=VIH Vcc Active Read Current ICC1 (Note1) /CE=VIL, /OE=VIH Word Mode Vcc Active Write Current ICC2 (Note 2 and 4) ICC3 ICC4 During Reset Automatic Sleep ICC5 Mode(Note3) VIL VIH Input Low Voltage Input High Voltage VIL=Vss0.3V -0.5 0.7xVcc 0.8 Vcc+0.3 V V VIH=Vcc0.3V; 0.2 5 uA Vcc Standby Current Vcc Standby Current Vcc=Vcc max ; /Reset=Vss0.3V 0.2 5 uA Vcc=Vcc max ; /CE,/Reset=Vcc0.3V 0.2 5 uA /CE=VIL, /OE=VIH 20 30 mA 5MHZ 1MHZ 9 2 16 4 Byte Mode 5MHZ 1MHZ 9 2 1.0 35 1.0 16 4 mA uA uA uA TEST CONDITIONS MIN TYP. MAX UNIT
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Voltage for Autoselect and VID Temporary Unprotect VOL VOH1 Output High Voltage VOH2 VLKO Note : 1. The Icc current listed is typically less 2mA/MHz, with /OE at V IH. Typical Vcc is 3.0V. 2. Icc active while Embedded Erase or Embedded Program is progress. Low Vcc Lock-Out Voltage IOH=-100uA, Vcc= Vcc min Output Low Voltage IOL=4.0mA, Vcc=Vcc min 0.85xVc IOH=-2.0mA, Vcc=Vcc min c Vcc-0.4 2.3 Vcc=3.3V 11.5
HMF3M32M6V
12.5 0.45 V V V V 2.5 V
3. Automatic sleep mode enables the low power mode when addresses remain stable for t ACC+30ns. Typical sleep mode current is 200nA. 4. Not 100% tested.
LATCHUP CHARACTERISTICS
DESCRIPTION Input Voltage with respect to Vss on all pins except I/O Pins -1.0V (Including A9,/OE, and /Reset) Input Voltage with respect to Vss on all I/O Pins Vcc Current Includes all pins except Vcc. Test conditions: Vcc=3.0V, one pin at a time. -1.0V -100mA Vcc+1.0V +100mA 12.5V MIN MAX
DATA RETENTION
PARAMETER Minimum Pattern Data Retention Time TEST CONDITIONS 150 C 125 C
O O
MIN 10 20
UNIT Years Years
ERASE AND PROGRAMMING PERFORMANCE
TYP PARAMETER (NOTE1) Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Mode (Note3) Notes :
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MAX (NOTE2) 0.7 25 9 11 18 12 300 360 54 36 15
UNIT s s us us
COMMENTS Excludes 00h programming prior to erasure (Note4)
Excludes system level overhead s s (Note5)
Word Mode
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O
HMF3M32M6V
1. Typical program and erase times assume the following conditions: 25 C, 3.0V Vcc, 1,000,000 cycles. Additionally programming typical assume checkerboard pattern. 2. Under worst case conditions of 90 C, Vcc=2.7V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed 4. In the pre-programming step of the Embedded Erase algorithm, all byt es are programmed to 00h before erasure. 5. System-level overhead is the time required to excute the two-or four-bus-cycle sequence for the program command. See table 9 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
O
SOP/TSOP PIN CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 6 8.5 7.5 7.5 12 9 pF pF pF TYP. MAX UNIT
Notes : 1. Sampled, not 100% tested 2.Test conditions T A = 25 C, f=1.0 MHz.
o
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, 30 CL (Including jig capacitance) Input rise and fall times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 5 0.0 - 3.0 1.5 1.5 ns V V V 100 pF 80R -90/ -120 1TTL gate UNIT
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3.0V
HMF3M32M6V
2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
AC CHARACTERISTICS u Erase / Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX Standard tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL (/OE High to /WE Low) tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY Note: 1. Not 100% tested.
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-80 Min Min Min Min Min Min Min 45 35 0 0 0 0 0 35 30 9 11 0.7 50 0 90 80 0
-90 90
UNIT ns ns
Write Cycle Time (Note1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write
45 45
ns ns ns ns ns ns ns
/CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation (Note2) Word Sector Erase Operation (Note2) Vcc Setup Time (Note1) Recovery Time from RY//BY Program/ Erase Valid to RY//BY Delay
Min Min Min Min Typ Typ Typ Min Min Min
35
ns ns us us sec us ns ns
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2. See the "Erase and Programming Performance" section for more Information
HMF3M32M6V
u Alternate /CE Controlled Erase/ Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Standard tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL (/OE High to /WE Low) tWS tWH tCP tCPH tWHWH1 Operation (Note2) tWHWH2 Sector Erase Operation (Note2) Word Min Min 11 0.7 us /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Programming Byte Min Min Min Min Min 35 30 9 0 0 35 ns ns ns ns us Write Cycle Time (Note1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write Min 0 ns Min Min Min Min Min Min 45 35 0 0 80 0 45 45 90 ns ns ns ns ns ns -80 -90 UNIT
Note: 1. Not 100% tested. 2. See the "Erase and Programming Performan ce" section for more Information.
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u READ OPERATIONS TIMING
HMF3M32M6V
u RESET TIMING
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u PROGRAM OPERATIONS TIMING
HMF3M32M6V
u CHIP/SECTOR ERASE OPERATION TIMINGS
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u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF3M32M6V
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF3M32M6V
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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PACKAGE DIMENSIONS
HMF3M32M6V
107.95 0.2mm 3.38 0.2 mm
17.5 0.2mm 6.35 0.2mm 1
72
2.03 0.2 mm 1.0 0.2 mm
6.35 0.2mm 95.25 0.2 mm
1.27 0.2 mm
2.79 0.2mm
2.54 mm 0.25 mm MAX MIN
Gold: 1.040.10 mm 1.27 Solder: 0.9140.10 mm 1.290.08 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Component Number 6EA 6EA 6EA 6EA
Part Number
Density
Org.
Package
Vcc
Speed
HMF3M32M6V-70 HMF3M32M6V-80 HMF3M32M6V-90 HMF3M32M6V-120
12MByte 12MByte 12MByte 12MByte
3MX 32bit 3MX 32bit 3MX 32bit 3MX 32bit
72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM
3.3V 3.3V 3.3V 3.3V
70ns 80ns 90ns 120ns
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